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Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Identifieur interne : 006815 ( Main/Repository ); précédent : 006814; suivant : 006816

Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Auteurs : RBID : Pascal:08-0316506

Descripteurs français

Pascal (Inist)
- Structure électronique, Sous bande, Bande interdite, Autocohérence, Equation Schrödinger, Fonction propre, Valeur propre, Equation Poisson, Confinement, Système quantique, Distribution charge électronique, Arséniure d'indium, Antimoniure de gallium, Puits quantique, Hétérostructure, InAs, GaSb, GaP, 8107S.

English descriptors

KwdEn :
- Confinement, Eigenfunctions, Eigenvalues, Electron charge distribution, Electronic structure, Energy gap, Gallium antimonides, Heterostructures, Indium arsenides, Poisson equation, Quantum system, Quantum wells, Schroedinger equation, Self consistency, Subband.

Abstract

We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap quantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent calculation can be used to understand important experimental findings and are in line with those measured experimentally.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems</title>
<author><name sortKey="Xu, W" uniqKey="Xu W">W. Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230031</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Theoretical Physics, RSPhysSE, Australian National University</s1>
<s2>Canberra ACT 0200</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Canberra ACT 0200</wicri:noRegion>
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</author>
<author><name sortKey="Folkes, P A" uniqKey="Folkes P">P. A. Folkes</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>U.S. Army Research Laboratory</s1>
<s2>Adelphi, MD 20783</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>U.S. Army Research Laboratory</wicri:noRegion>
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</author>
<author><name sortKey="Gumbs, G" uniqKey="Gumbs G">G. Gumbs</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Hunter College, City University of New York</s1>
<s2>NY 10021</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">État de New York</region>
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</author>
<author><name sortKey="Zeng, Z" uniqKey="Zeng Z">Z. Zeng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Hefei 230031</wicri:noRegion>
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</author>
<author><name sortKey="Zhang, C" uniqKey="Zhang C">C. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>School of Physics, University of Wollongong</s1>
<s2>Wollongong NSW 2522</s2>
<s3>AUS</s3>
<sZ>5 aut.</sZ>
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<country>Australie</country>
<wicri:noRegion>Wollongong NSW 2522</wicri:noRegion>
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<seriesStmt><idno type="ISSN">1386-9477</idno>
<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
<title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Confinement</term>
<term>Eigenfunctions</term>
<term>Eigenvalues</term>
<term>Electron charge distribution</term>
<term>Electronic structure</term>
<term>Energy gap</term>
<term>Gallium antimonides</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Poisson equation</term>
<term>Quantum system</term>
<term>Quantum wells</term>
<term>Schroedinger equation</term>
<term>Self consistency</term>
<term>Subband</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Structure électronique</term>
<term>Sous bande</term>
<term>Bande interdite</term>
<term>Autocohérence</term>
<term>Equation Schrödinger</term>
<term>Fonction propre</term>
<term>Valeur propre</term>
<term>Equation Poisson</term>
<term>Confinement</term>
<term>Système quantique</term>
<term>Distribution charge électronique</term>
<term>Arséniure d'indium</term>
<term>Antimoniure de gallium</term>
<term>Puits quantique</term>
<term>Hétérostructure</term>
<term>InAs</term>
<term>GaSb</term>
<term>GaP</term>
<term>8107S</term>
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<front><div type="abstract" xml:lang="en">We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap quantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent calculation can be used to understand important experimental findings and are in line with those measured experimentally.</div>
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<fA05><s2>40</s2>
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<fA06><s2>5</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 17th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-17)</s1>
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<fA11 i1="01" i2="1"><s1>XU (W.)</s1>
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<fA12 i1="01" i2="1"><s1>GOLDONI (G.)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>SORBA (L.)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences</s1>
<s2>Hefei 230031</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Department of Theoretical Physics, RSPhysSE, Australian National University</s1>
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<sZ>1 aut.</sZ>
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<fA14 i1="03"><s1>U.S. Army Research Laboratory</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="04"><s1>Department of Physics, Hunter College, City University of New York</s1>
<s2>NY 10021</s2>
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<sZ>3 aut.</sZ>
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<fA14 i1="05"><s1>School of Physics, University of Wollongong</s1>
<s2>Wollongong NSW 2522</s2>
<s3>AUS</s3>
<sZ>5 aut.</sZ>
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<fA15 i1="01"><s1>Dipartimento di Fisica & INFM-S3, Università di Modena e Reggio Emilia, Via Campi 213/A</s1>
<s2>41100 Modena</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
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<fA15 i1="02"><s1>NEST CNR-INFM and Scuola Normale Superiore, Complesso polvani, Via Della Faggiola, 17/19</s1>
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<fC01 i1="01" l="ENG"><s0>We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap quantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent calculation can be used to understand important experimental findings and are in line with those measured experimentally.</s0>
</fC01>
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<s5>08</s5>
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<s5>11</s5>
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<s5>12</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Electron charge distribution</s0>
<s5>12</s5>
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<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>52</s5>
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<s4>INC</s4>
<s5>53</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>GaP</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8107S</s0>
<s4>INC</s4>
<s5>56</s5>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-17)</s1>
<s2>17</s2>
<s3>Genova ITA</s3>
<s4>2007-07-15</s4>
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Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri